CHEONG, Byung Ki

Ph.D., Materials Science and Engineering (Carnegie Mellon Univ.)
e-mail: bkcheong@kist.re.kr
phone: +82-2-958-5385
home page: http://tfmdl.kist.re.kr

Dr. Cheong leads a 'phase change memory' research group in thin film materials research center of KIST. The group's primary interests and capabilities are placed in design, fabrication and characterization of thin films of chalcogenide semiconducting materials and their devices particularly for memory applications such as phase change electrical and optical memory. As for electrical memory, his group has been in pursuit of new materials for high density PRAM (phase change random access memory) while leading the PRAM projects in national research programs such as Tera-level Nano Device and 0.1Tb Non-volatile Memory development, respectively. As for optical memory, the group, lately awarded a KRL (KIST Research Laboratory), is moving for a world-level competence in research and development of materials for a promising ultra-high density optical recording technology called super-resolution.

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